Electrical & Electronic Engineering

Dr. Md. Tashfiq Bin Kashem

Research Interests

• Thermoelectric effects in electronic devices
• Semiconductor memory devices
• Electronic transport in semiconductor devices

Educational Background

• PhD, (Electrical Engineering), University of Connecticut, Storrs, Connecticut, USA
• Master of Science (MSc), (Electrical and Electronic Engineering), Bangladesh University of Engineering and Technology (BUET)
• Bachelor of Science (BSc), (Electrical and Electronic Engineering), Bangladesh University of Engineering and Technology (BUET)

Honors and Achievements

• 1st Place in ECE & IEEE PELS/PES Poster Competition, University of Connecticut, 2023
• Doctoral Dissertation Fellowship, University of Connecticut, 2023
• Engineering Admin Fellowship, University of Connecticut, 2022
• Conference Participation Fellowship, University of Connecticut, 2022
• Departmental Champion in 8th SoE Annual Graduate Poster Competition, School of Engineering, University of Connecticut, 2022
• Graduate Fellowship for Innovation, General Electric, 2020
• Pre-doctoral Fellowship, University of Connecticut, 2020
• Best Teaching Assistant, ECE Department, University of Connecticut, 2019
• Graduate Research Assistantship, United States National Science Foundation (US NSF), 2018
• Graduate Teaching Assistantship, ECE Department, University of Connecticut, 2018
• University Dean’s List Award, Bangladesh University of Engineering and Technology (BUET), 2011
• University Dean’s List Award, Bangladesh University of Engineering and Technology (BUET), 2010
• University Dean’s List Award, Bangladesh University of Engineering and Technology (BUET), 2009
• University Dean’s List Award, Bangladesh University of Engineering and Technology (BUET), 2008
• Dhaka Education Board Scholarship, Dhaka Board, 2006
• Dhaka Education Board Scholarship, Dhaka Board, 2004

Publications

1. Electronic transport in amorphous Ge2Sb2Te5 phase-change memory line cells and its response to photoexcitation, Applied Physics Letters, 2024, AIP Publishing.
2. Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures, ECS Journal of Solid State Science and Technology, 2024, Electrochemical Society, Inc..
3. Modeling Reset, Set and Read Operations in Nanoscale Ge2Sb2Te5 Phase-Change Memory Devices Using Electric field- and Temperature-Dependent Material Properties, physica status solidi (RRL) - Rapid Research Letters, 2023, Wiley.
4. Calculation of the Energy Band Diagram and Estimation of Electronic Transport Parameters of Metastable Amorphous Ge2Sb2Te5, ECS Transactions, 2022, Electrochemical Society, Inc..
5. Finite Element Modeling of Thermoelectric Effects in Phase Change Memory Cells, ECS Transactions, 2022, Electrochemical Society, Inc..
6. Computational Analysis of Joule Heating Effect in Triple Material Gate AlGaN/GaN High Electron Mobility Transistor, ECS Transactions, 2021.
7. Reset variability in phase change memory for hardware security applications, IEEE Transactions on Nanotechnology, 2020, IEEE.
8. Analytical modeling of channel potential and threshold voltage of triple material gate AlGaN/GaN HEMT including trapped and polarization‐induced charges, International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2019, Wiley.
9. Characteristics of Fully Depleted Four-Gate Field Effect Transistor with Localized Interface Charges: A 3-D Simulation Study, Journal of Nanoelectronics and Optoelectronics, 2015, American Scientific Publishers.

1. Finite Element Analysis of GeTe/Ge2Sb2Te5 Interfacial Phase Change Memory Devices, 2022 20th Non-Volatile Memory Technology Symposium (NVMTS), 2022, IEEE.
2. Characteristic analysis of triple material tri-gate junctionless tunnel field effect transistor, 2016 9th International Conference on Electrical and Computer Engineering (ICECE), 2016, IEEE.
3. Characteristics of Triple Material Gate AlGaN/GaN High Electron Mobility Transistor, 2015 International Conference on Advances in Electrical Engineering (ICAEE), 2015, IEEE.
4. Thermal conductivity of single layer graphene supported on silicon nitride/silicon substrates, 2015 IEEE International WIE Conference on Electrical and Computer Engineering (WIECON-ECE), 2015, IEEE.
5. Study on doping profile and scaling characteristics of gate and channel engineered symmetric double gate MOSFET, 2016 9th International Conference on Electrical and Computer Engineering (ICECE), 0, IEEE.